photomultiplier tubes R7518 R7518p (for photon counting) high sensitivity with low noise photocathode general chemiluminescence detection bioluminescence detection fluorescence spectrometer so 2 monitor (uv fluorescence) spectral response .................................. high cathode sensitivity luminous ......................................................... radiant at 410 nm ............................................. high anode sensitivity (at 1000 v) luminous ......................................................... radiant at 410 nm ..................................... low dark current ....................................................... low dark counts (R7518p) ......................................... 185 nm to 730 nm 130 a/lm 85 ma/w 1560 a/lm 10.2 10 5 a/w 0.2 na 10 s -1 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?005 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. parameter description/value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 730 410 low noise bialkali 8 24 uv glass low noise bialkali circular-cage 9 4 6 11-pin base jedec no. b11-88 45 -30 to +50 -30 to +50 e678?1a (sold separately) e717?3 (sold separately) nm nm mm pf pf g c c specifications features applications materiai minimum effective area secondary emitting surface structure number of stages anode to last dynode anode to all other electrode
photomultiplier tubes R7518, R7518p (for photon counting) maximum ratings (absolute maximum values) characteristlcs (at 25 c) notes a: b: c: d: e: f: g: h: j: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution tem- perature of 2856 k. supply voltage is 150 v between the cathode and all other electrodes connected together as anode. measured with the same light source as note b and with the anode-to- cathode supply voltage and voltage distribution ratio shown in table 1 be- low. measured with the same supply voltage and voltage distribution ratio as note e after removal of light. measured at the voltage producing the gain of 1 10 6 . eni is an indication of the photon-limited signal-to-noise ratio. it refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = electronic charge. (1.60 10 -19 coulomb) ldb = anode dark current(after 30 minute storage) in amperes. g = gain. f = bandwidth of the system in hertz. (usually 1 hertz) s = anode radiant sensitivity in amperes per watt at the wave- length of peak response the rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. in measurement, the whole photo- cathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. k: hysteresis is temporary instability in anode current after light and voltage are applied. eni = s ( w ) 2q . ldb . g . f electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p distribution ratio 1 111111111 suppiy voltage : 1000 v, k: cathode, dy: dynode, p: anode table 1:voltage distribution ratio hysteresis = 100 (%) l max. l i l min. (1)current hysteresis the tube is operated at 750 v with an anode current of 1 a for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)voltage hysteresis the tube is operated at 300 v with an anode current of 0.1 a for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 v. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes) value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 2.0 % a/lm ma/w a/lm-b a/lm a/w na s -1 w ns ns ns % % 29 130 85 10 1560 10.2 10 5 1.2 10 7 0.2 2.7 10 -17 2.2 22 1.2 0.1 1.0 min. typ. R7518p for photon counting max. 120 1200 0.5 50 29 130 85 10 1560 10.2 10 5 1.2 10 7 0.2 10 2.7 10 -17 2.2 22 1.2 0.1 1.0 min. R7518 for general purpose quantum efficiency at 300 nm (peak) luminous b radiant at 410 nm (peak) blue sensitivity index (cs 5-58) luminous c radiant at 400 nm anode pulse rise time g electron transit time transit time spread (tts) h light hysteresis voltage hysteresis 120 1200 parameter cathode sensitivity anode sensitivity gain d anode dark current e (after 30 min storage in darkness) anode dark counts e eni (equivalent noise input) f time response d anode current stability j between anode and cathode between anode and last dynode
figure 1: typical spectral response tpmsb0177ea figure 2: typical gain and anode dark current tpmsb0011ea 0.01 0.1 100 1000 100 200 300 400 500 600 700 800 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) 10 1 cathode radiant sensitivity quantum efficiency 10 - 5 10 - 10 10 - 11 10 - 12 300 400 500 600 800 1000 1500 supply voltage (v) anode dark current (a) 10 - 9 10 - 8 10 - 7 10 - 6 gain 10 8 10 3 10 2 10 1 10 4 10 5 10 6 10 7 gain anode dark current figure 3: typical time response tpmsb0004eb figure 4: typical eni vs. wavelength tpmsb0178ea figure 5: typical single photon pulse height distribution for R7518p tpmsb0179eb 300 500 700 1000 1500 supply voltage (v) time (ns) 1 2 4 6 8 10 20 40 60 80 100 rise time transit time 100 200 300 400 500 600 700 800 wavelength (nm) 10 - 17 10 - 16 10 - 15 10 - 14 10 - 13 equivalent noise input (w) 1.0 0.8 0.2 0 200 400 600 800 1000 channel number (ch) count per channel 0.4 0.6 full scale 10 4 (photon+dark) full scale 10 3 (dark) photon+dark dark wavelength of incident light : 450 (nm) supply voltage lower level discri. photon + dark count dark count ambient temperature : 722 (v) : 67 (ch) : 6021 (s -1 ) : 10 (s -1 ) : 25 ( c) lower level discri. figure 6: typical temperature characteristics of dark count for R7518p tpmsb0015eb 10 - 1 -20 0 +20 +40 temperature ( c) dark count (s -1 ) +50 10 0 10 1 10 2 10 3 10 4
tpms1060e02 apr. 2005. ip photomultiplier tubes R7518, R7518p (for photon counting) hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 8, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (33 )1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site http://www.hamamatsu.com figure 7: dimensional outline and basing diagram (unit: mm) figure 8: socket e678-11a (sold separately) figure 9: d type socket assembly e717-63 (sold separately) warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incorporate a dc to dc converter type high voltage power supply. tacca0002eh tpmsa0001eb tacca0064ea bottom view (basing diagram) 33 5 49 3.5 38 29 4 18 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 28.5 1.5 8 min. photocathode 24 min. 49.0 2.5 80 max. 94 max. 11 32.2 0.5 11 pin base jedec no. b11-88 potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1
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